A Bandgap Voltage Reference With Only MOS Transistors

نویسندگان

  • Antonio Ribeiro
  • Ricardo Gama
  • Tiago Costa
  • Rui Neves
  • Nuno Horta
  • Paulo Pereira
چکیده

The bandgap voltage reference (BGR) circuit is an important component of Analog-to-Digital and Digital-toAnalog converters, which are broadly used in mixed-signal and radio-frequency systems. Most BGR use bipolar junction transistors (BJT) to easily reduce the temperature dependence, due to temperature coefficients, other common practice is the use of operational amplifiers (OP-AMP). The goal is to implement a BGR architecture without the use of an op-amp and using only one type of transistors, in this case, CMOS technology, and without the use of parasitic BJT. This must be accomplished without compromising the specified voltage variation requirements, BGR with 1% variation. An all CMOS BGR without BJT and without Op-Amp is proposed and simulated using Xfab 0.18-μm process. The bandgap works with 1.8-V supply voltage with ±10% variation. The circuit generates an output reference voltage of 605.865 mV with a variation of ±3.325 mV over a temperature range from -40 to 85oC, which corresponds to 1.097% variation.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

A Novel Sub-1 Volt Bandgap Reference with all CMOS

This paper deals with the design of novel sub-1-V bandgap reference circuit using only MOS transistors in 0.18 μm CMOS technology, for a supply voltage of 1.8V. The circuit produces a voltage reference of 466.5 mV at 27C with a temperature coefficient of 28.4 ppm/C in the range of -20 to +120C. The power supply rejection of circuit is -30 dB at 8 KHz and this rejection further increase to -50 d...

متن کامل

Design of Bandgap Core and Startup Circuits for All CMOS Bandgap Voltage Reference

This paper proposes a new self-biased op-amp’s startup circuit design and improved bandgap core circuit for all CMOS bandgap voltage reference (BGR). In a conventional BGR circuit, the startup circuit may be designed either be required an external power on reset signal (POR) or composed of several MOS transistors for generating bias current and the bandgap core circuits has two nodes that are c...

متن کامل

ISSCC 2009 / SESSION 19 / ANALOG TECHNIQUES / 19 . 6 19 . 6 A sub - 1 V Bandgap Voltage Reference in 32 nm FinFET Technology

The bulk CMOS technology is expected to scale down to about 32nm node and likely the successor would be the FinFET. The FinFET is an ultra-thin body multi-gate MOS transistor with among other characteristics a much higher voltage gain compared to a conventional bulk MOS transistor [1]. Bandgap reference circuits cannot be directly ported from bulk CMOS technologies to SOI FinFET technologies, b...

متن کامل

A programmable CMOS bandgap voltage reference circuit using current conveyor

This paper presents a new structure of a bandgap circuit which can be programmed to get any desired output voltage. Unlike conventional bandgap circuits, the proposed bandgap circuit uses MOS transistors operating in subthreshold region instead of bipolar transistors to generate PTAT and IPTAT currents. Use of the current conveyor makes the circuit capable of being operated at lower supply volt...

متن کامل

A high supply voltage bandgap reference circuit using drain-extended MOS devices

A bandgap reference circuit that uses high-voltage drainextended MOS (DeMOS) devices is presented for high supply voltage application without using a voltage regulator for the bandgap core circuit. The bandgap reference circuit was fabricated using commercially available 0.18μm high-voltage DeMOS technology. Measurement result of the chip shows that the reference voltage change rate for VDD var...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2009